DETERMINATION OF THE H DISTRIBUTION IN REACTIVELY SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS BY PROTON NUCLEAR MAGNETIC RESONANCEJEFFREY FR; LOWRY ME.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5529-5533; BIBL. 19 REF.Article

²⁹SI NMR SPECTRA FOR REACTIVELY SPUTTERED AMORPHOUS SILICONJEFFREY FR; DUBOIS MURPHY P; GERSTEIN BC et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 5; PP. 2099-2101; BIBL. 14 REF.Article

CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS SILICONJEFFREY FR; SHANKS HR; DANIELSON GC et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7034-7038; BIBL. 5 REF.Article

DETERMINATION OF THE RELATIVE NUMBER OF MONOHYDRIDE AND DIHYDRIDE BONDING SITES IN AMORPHOUS SILICON-HYDROGEN ALLOYS USING FULSED NMR TECHNIQUESLOWRY M; JEFFREY FR; BARNES RG et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 2; PP. 113-116; BIBL. 13 REF.Article